Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma processing apparatus

• Main Authors: NISHITA, TATSUO, NAKANISHI, TOSHIO, HIROTA, YOSHIHIRO, KOHNO, MASAYUKI
• Format: Patent
• Language: Chinese; English
• Published: 16.01.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A plasma processing apparatus (100) introduces microwaves into a chamber (1) by a flat antenna (31) which has a plurality of holes. A material gas, which contains a nitrogen-containing compound and a silicon-containing compound, is introduced into the chamber (1) by using the plasma processing appar...