Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma processing apparatus
A plasma processing apparatus (100) introduces microwaves into a chamber (1) by a flat antenna (31) which has a plurality of holes. A material gas, which contains a nitrogen-containing compound and a silicon-containing compound, is introduced into the chamber (1) by using the plasma processing appar...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
16.01.2009
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Subjects | |
Online Access | Get full text |
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Summary: | A plasma processing apparatus (100) introduces microwaves into a chamber (1) by a flat antenna (31) which has a plurality of holes. A material gas, which contains a nitrogen-containing compound and a silicon-containing compound, is introduced into the chamber (1) by using the plasma processing apparatus, and plasma is generated by the microwaves. Then, a silicon nitride film is deposited by the plasma on a surface of a body to be processed. The trap density of the silicon nitride film is controlled by adjusting the conditions of the plasma CVD process. |
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Bibliography: | Application Number: TW200897110780 |