Failure test method for semiconductor device

• Main Authors: LEE, THING-JONG, CHEN, CHANGIEH
• Format: Patent
• Language: Chinese; English
• Published: 01.01.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

A failure test method for semiconductor device including following steps is provided. A test system is provided, and a cross failure pattern of a word line to bit line shortage failure is defined in the test system. The wafer is scanned to obtain a bit map of a wafer by a test system. The bit map of all chips on the wafer is compared with the cross failure pattern to find out the word line to bit line shortage failure on the wafer. A failure data of all failure types on the wafer is outputted. A word line to bit line shortage failure data is extracted from the failure data to rule out factors of the word line to bit line shortage failure. A current leakage data caused by the word line to bit line shortage failure is calculated. A semiconductor device design is redesigned according to the word line to bit line shortage failure data and the current leakage data.