Semiconductor device

A semiconductor device of the present invention includes an insulating film made of a low dielectric constant material having a smaller specific dielectric constant than SiO2, a wiring trench formed in the insulating film, a first barrier film made of SiO2 or SiCO formed at least on the side surface...

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Bibliographic Details
Main Author KAGEYAMA, SATOSHI
Format Patent
LanguageChinese
English
Published 16.12.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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