Semiconductor device

A semiconductor device of the present invention includes an insulating film made of a low dielectric constant material having a smaller specific dielectric constant than SiO2, a wiring trench formed in the insulating film, a first barrier film made of SiO2 or SiCO formed at least on the side surface...

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Bibliographic Details
Main Author KAGEYAMA, SATOSHI
Format Patent
LanguageChinese
English
Published 16.12.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device of the present invention includes an insulating film made of a low dielectric constant material having a smaller specific dielectric constant than SiO2, a wiring trench formed in the insulating film, a first barrier film made of SiO2 or SiCO formed at least on the side surface of the wiring trench, Cu wiring mainly composed of Cu embedded in the wiring trench, and a second barrier film made of a compound containing Si, O and a predetermined metallic element covering the surface of the Cu wiring opposed to the wiring trench.
Bibliography:Application Number: TW20080118519