Semiconductor device
A semiconductor device of the present invention includes an insulating film made of a low dielectric constant material having a smaller specific dielectric constant than SiO2, a wiring trench formed in the insulating film, a first barrier film made of SiO2 or SiCO formed at least on the side surface...
Saved in:
| Main Author | |
|---|---|
| Format | Patent |
| Language | Chinese English |
| Published |
16.12.2008
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | A semiconductor device of the present invention includes an insulating film made of a low dielectric constant material having a smaller specific dielectric constant than SiO2, a wiring trench formed in the insulating film, a first barrier film made of SiO2 or SiCO formed at least on the side surface of the wiring trench, Cu wiring mainly composed of Cu embedded in the wiring trench, and a second barrier film made of a compound containing Si, O and a predetermined metallic element covering the surface of the Cu wiring opposed to the wiring trench. |
|---|---|
| AbstractList | A semiconductor device of the present invention includes an insulating film made of a low dielectric constant material having a smaller specific dielectric constant than SiO2, a wiring trench formed in the insulating film, a first barrier film made of SiO2 or SiCO formed at least on the side surface of the wiring trench, Cu wiring mainly composed of Cu embedded in the wiring trench, and a second barrier film made of a compound containing Si, O and a predetermined metallic element covering the surface of the Cu wiring opposed to the wiring trench. |
| Author | KAGEYAMA, SATOSHI |
| Author_xml | – fullname: KAGEYAMA, SATOSHI |
| BookMark | eNrjYmDJy89L5WQQCU7NzUzOz0spTS7JL1JISS3LTE7lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxIeFGBgYWJpYm5iaOxsSoAQArJSLo |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | TW200849474A |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_TW200849474A3 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 12:30:06 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | Chinese English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_TW200849474A3 |
| Notes | Application Number: TW20080118519 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081216&DB=EPODOC&CC=TW&NR=200849474A |
| ParticipantIDs | epo_espacenet_TW200849474A |
| PublicationCentury | 2000 |
| PublicationDate | 20081216 |
| PublicationDateYYYYMMDD | 2008-12-16 |
| PublicationDate_xml | – month: 12 year: 2008 text: 20081216 day: 16 |
| PublicationDecade | 2000 |
| PublicationYear | 2008 |
| RelatedCompanies | ROHM CO., LTD |
| RelatedCompanies_xml | – name: ROHM CO., LTD |
| Score | 2.826546 |
| Snippet | A semiconductor device of the present invention includes an insulating film made of a low dielectric constant material having a smaller specific dielectric... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Semiconductor device |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20081216&DB=EPODOC&locale=&CC=TW&NR=200849474A |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQAfZ00oxS08x0U1JMzXVNDA0MwNe86JonpgHbo6YpFmmmoM3Jvn5mHqEmXhGmEUwMWbC9MOBzQsvBhyMCc1QyML-XgMvrAsQglgt4bWWxflImUCjf3i3E1kUN1jsGVleGZmouTrauAf4u_s5qzs62IeFqfkFgORNLE3MTR2YGVmAz2hyUG1zDnEC7UgqQqxQ3QQa2AKBpeSVCDExVGcIMnM6wm9eEGTh8oRPeQCY07xWLMIgEg9ax5-eBDmjNL1JISQXlcVEGRTfXEGcPXaDx8XC_xIeEI1xiLMbAAuzjp0owKFgkWVgmpyalJQErVGCApSQZpKYZmSQBO0dJxsnAIJNkkMJtjhQ-SWkGLvASB0MjXUMzGQaWkqLSVFlgPVqSJAcOAAA1nnZe |
| link.rule.ids | 230,309,783,888,25576,76876 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQAfZ00oxS08x0U1JMzXVNDA0MwNe86JonpgHbo6YpFmmmoM3Jvn5mHqEmXhGmEUwMWbC9MOBzQsvBhyMCc1QyML-XgMvrAsQglgt4bWWxflImUCjf3i3E1kUN1jsGVleGZmouTrauAf4u_s5qzs62IeFqfkFgORNLE3MTR2YGVmAT2xyUG1zDnEC7UgqQqxQ3QQa2AKBpeSVCDExVGcIMnM6wm9eEGTh8oRPeQCY07xWLMIgEg9ax5-eBDmjNL1JISQXlcVEGRTfXEGcPXaDx8XC_xIeEI1xiLMbAAuzjp0owKFgkWVgmpyalJQErVGCApSQZpKYZmSQBO0dJxsnAIJNkkMJtjhQ-SXkGTo8QX594H08_b2kGLvByB0MjXUMzGQaWkqLSVFlgnVqSJAcODADsuHlR |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device&rft.inventor=KAGEYAMA%2C+SATOSHI&rft.date=2008-12-16&rft.externalDBID=A&rft.externalDocID=TW200849474A |