Compositions and methods for the selective removal of silicon nitride
Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solven...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
16.12.2008
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Subjects | |
Online Access | Get full text |
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Summary: | Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100 DEG C and typical selectivity for nitride versus oxide etch is about 200: 1 to about 2000: 1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 min-1. |
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Bibliography: | Application Number: TW20070149625 |