Integrated method for removal of halogen residues from etched substrates by thermal process
A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the sys...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
16.09.2008
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Subjects | |
Online Access | Get full text |
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Summary: | A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues removal process is performed in the system other than the halogen treatment processing chamber and a FOUP. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a vacuum tight platform, processing a substrate in a processing chamber of the platform with a chemistry comprising halogen, and treating the processed substrate in the platform to release volatile residues from the treated substrate. |
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Bibliography: | Application Number: TW20070140350 |