Thin film forming method and thin film forming device

• Main Authors: KOMATSU, TAKASHI, OOISHI, YUUICHI, KIYOTA, JUNYA, ARAI, MAKOTO
• Format: Patent
• Language: Chinese; English
• Published: 01.09.2008
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

When targets are arranged at equal intervals and a predetermined thin film is formed by sputtering, a waving film thickness distribution or a waving film quality distribution of the thin film formed on a surface of a substrate under process is prevented. While a predetermined thin film is formed by sputtering on the substrate (S) under process by applying power to targets (31a to 31h) opposed to the substrate (S) in a sputtering chamber (11a) and arranged at predetermined intervals, the targets are reciprocated parallel to the substrate at a constant speed, and a magnet assembly forming magnetic fluxes (M) each having a tunnel shape are reciprocated parallel to the targets in front of the targets at a constant speed. When the targets reach the turning position of the reciprocation, the reciprocation of the targets is stopped for a predetermined time.