Single voltage supply pseudomorphic high electron mobility transistor (PHEMT) power device and process for manufacturing the same

• Main Authors: PERONI, MARCO, CETRONIO, ANTONIO, LAVANGA, SIMONE, LANZIERI, CLAUDIO
• Format: Patent
• Language: Chinese; English
• Published: 16.08.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed herein is a pseudomorphic high electron mobility transistor (PHEMT) power device including a semi-insulating substrate; an epitaxial substrate formed on the semi-insulating substrate and including a buffer layer, a superlattice layer, a first electron supply layer, a first spacer layer, an electron transit layer, a second spacer layer, a second electron supply layer, a Schottky layer, and a contact layer sequentially stacked on the semi-insulating substrate; source and drain electrodes formed on, and in ohmic contact with the contact layer; and a gate electrode formed on the Schottky layer to extend through the contact layer. The contact layer includes a lightly doped contact layer formed on the Schottky layer, and a highly doped contact layer formed on the lightly doped contact layer and having a doping concentration higher than the lightly doped contact layer. The PHEMT power device further includes a wide recess formed to penetrate the highly doped contact layer so as to expose a surface of the l