Electrostatic discharge protection device

An electrostatic discharge protection device is disclosed. A first well of a second conductive type is formed in a substrate of a first conductive type. A second well of the first conductive type is formed in the first well. A third well of the second conductive type is formed in the second well. A...

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Bibliographic Details
Main Authors TSENG, JENOU, WANG, TSUNG-MIAU
Format Patent
LanguageChinese
English
Published 16.06.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An electrostatic discharge protection device is disclosed. A first well of a second conductive type is formed in a substrate of a first conductive type. A second well of the first conductive type is formed in the first well. A third well of the second conductive type is formed in the second well. A first doped region of the second conductive type is formed in the second well. A gate controls the electrical connection of the first doped region and the third well. A metal oxide semiconductor field effect transistor comprises the gate, the first doped region and the third well. A second doped region of the second conductive type is formed in the third well.
Bibliography:Application Number: TW20060146841