Electrostatic discharge protection device
An electrostatic discharge protection device is disclosed. A first well of a second conductive type is formed in a substrate of a first conductive type. A second well of the first conductive type is formed in the first well. A third well of the second conductive type is formed in the second well. A...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
16.06.2008
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Subjects | |
Online Access | Get full text |
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Summary: | An electrostatic discharge protection device is disclosed. A first well of a second conductive type is formed in a substrate of a first conductive type. A second well of the first conductive type is formed in the first well. A third well of the second conductive type is formed in the second well. A first doped region of the second conductive type is formed in the second well. A gate controls the electrical connection of the first doped region and the third well. A metal oxide semiconductor field effect transistor comprises the gate, the first doped region and the third well. A second doped region of the second conductive type is formed in the third well. |
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Bibliography: | Application Number: TW20060146841 |