Metal-oxide-semiconductor transistor and method of forming the same

A method of manufacturing a MOS transistor is provided. First, a semiconductor substrate having a gate structure is prepared. The gate structure has two sidewalls and a liner on the sidewalls. Subsequently, a stressed cap layer is formed on the semiconductor substrate, and covers the gate structure...

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Bibliographic Details
Main Authors JENG, LI-SHIAN, HUNG, WEN-HAN, HUANG, CHIEN CHUNG, HUANG, CHENG-TUNG, TING, SHYH-FANN, TSAI, TENG CHUN, CHENG, TZYY MING, CHEN, NENG KUO, LEE, KUN-HSIEN, HSU, SHAO TA
Format Patent
LanguageChinese
English
Published 01.05.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a MOS transistor is provided. First, a semiconductor substrate having a gate structure is prepared. The gate structure has two sidewalls and a liner on the sidewalls. Subsequently, a stressed cap layer is formed on the semiconductor substrate, and covers the gate structure and the liner. Next, an activating process is performed. Furthermore, the stressed cap layer is etched to be a salicide block. Afterward, a salicide process is performed to form a silicide layer on the regions that is not covered by the stressed cap layer.
Bibliography:Application Number: TW20060139526