Method of fabricating poly silicon layer thereof, and method for improve silicon-based device uniformity

A method of fabricating a poly silicon layer of a low temperature poly silicon (LTPS) thin film transistor (TFT) is provided. An amorphous silicon film is formed on a substrate, and then the substrate having the amorphous silicon film is dipped into a mixture solution. The mixture solution includes...

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Bibliographic Details
Main Authors LAI, CHIH-MING, HUANG, JUNG-JIE, YEH, YUNG-HUI
Format Patent
LanguageChinese
English
Published 16.04.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a poly silicon layer of a low temperature poly silicon (LTPS) thin film transistor (TFT) is provided. An amorphous silicon film is formed on a substrate, and then the substrate having the amorphous silicon film is dipped into a mixture solution. The mixture solution includes a fluorine ion source and an acid solution for adjusting the amount of fluorine ions. Afterward, the amorphous silicon film is crystallized to form a poly silicon layer, and the substrate having the poly silicon layer is then dipped into the mixture solution. Due to the foregoing dipping step, it can reduce the grain boundary traps (Dgb) and the interface trap states (Dit) to improve device uniformity.
Bibliography:Application Number: TW20060137509