Semiconductor integrated circuit device and method for manufacture thereof

A process for forming a silicon nitride film (21) which can prevent the diffusion of Cu on a Cu interconnect (19) which has been formed by damascene method comprises the steps of: (a) carrying a substrate (1) having a Cu interconnect (19) formed thereon into a chamber of a plasma CVD apparatus and h...

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Bibliographic Details
Main Authors MAKABE, KAZUYA, FUTASE, TAKUYA, YAMAZUMI, SAIGOU
Format Patent
LanguageChinese
English
Published 16.12.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process for forming a silicon nitride film (21) which can prevent the diffusion of Cu on a Cu interconnect (19) which has been formed by damascene method comprises the steps of: (a) carrying a substrate (1) having a Cu interconnect (19) formed thereon into a chamber of a plasma CVD apparatus and heating the substrate (1) to a predetermined temperature; (b) feeding ammonia to the chamber and plasma-decomposing the ammonia with a first RF power, thereby reducing the surface of the Cu interconnect (19); and (c) feeding a raw material gas comprising ammonia and a monosilane to the chamber while maintaining the application of the RF power and plasma-decomposing the ammonia and a silane-containing gas with a second RF power, thereby forming the silicon nitride film (19) on the Cu interconnect (19).
Bibliography:Application Number: TW200695126749