Semiconductor device and method of manufacturing such a device

The invention relates to a semiconductor device (10) with a substrate (12) and a semiconductor body (11) of silicon that is provided at one location (A) with a field effect or bipolar transistor (T1) with a semiconductor region which forms part of the transistor (T1) and which comprises a source or...

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Bibliographic Details
Main Authors HIJZEN, ERWIN, DONKERS, JOHANNES JOSEPHUS THEODORUS MARINUS, MEUNIER-BEILLARD, PHILIPPE
Format Patent
LanguageChinese
English
Published 16.10.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a semiconductor device (10) with a substrate (12) and a semiconductor body (11) of silicon that is provided at one location (A) with a field effect or bipolar transistor (T1) with a semiconductor region which forms part of the transistor (T1) and which comprises a source or drain region of the field effect transistor or a base region of the bipolar transistor and which is adjacent to the surface of the semiconductor body (11), which semiconductor region is provided with an epitaxially thickened region. According to the invention the surface of the semiconductor body (11) is provided with another epitaxially thickened region (1) at a location (B) other than the location where the transistor is present, and said other epitaxially thickened region is provided with at least one pn-junction (2,3). If the device is provided with two pn-junctions (2,3) it allows advantageously the integration of a bipolar transistor (T2) into a device with a MOSFET (T1). The pn-junctions in the epitaxially t
Bibliography:Application Number: TW20070103066