Monolithic integrated circuit having enhancement mode/depletion mode field effect transistors and RF/RF/microwave/milli-meter wave milli-meter wave field effect transistors
A semiconductor structure having: a III-V substrate structure; an enhancement mode transistor device disposed in a first region of the structure; a depletion mode transistor device disposed in a laterally displaced second region of the structure; and a RF/microwave/milli-meter wave transistor device...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
16.06.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor structure having: a III-V substrate structure; an enhancement mode transistor device disposed in a first region of the structure; a depletion mode transistor device disposed in a laterally displaced second region of the structure; and a RF/microwave/milli-meter wave transistor device formed in a laterally displaced third region thereof. |
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Bibliography: | Application Number: TW20060102660 |