Monolithic integrated circuit having enhancement mode/depletion mode field effect transistors and RF/RF/microwave/milli-meter wave milli-meter wave field effect transistors

A semiconductor structure having: a III-V substrate structure; an enhancement mode transistor device disposed in a first region of the structure; a depletion mode transistor device disposed in a laterally displaced second region of the structure; and a RF/microwave/milli-meter wave transistor device...

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Bibliographic Details
Main Authors ADLERSTEIN, MICHAEL G, HWANG, KIUCHUL
Format Patent
LanguageChinese
English
Published 16.06.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure having: a III-V substrate structure; an enhancement mode transistor device disposed in a first region of the structure; a depletion mode transistor device disposed in a laterally displaced second region of the structure; and a RF/microwave/milli-meter wave transistor device formed in a laterally displaced third region thereof.
Bibliography:Application Number: TW20060102660