Lateral phase change memory with spacer electrodes and method of manufacturing the same

Lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by way of the lower resistivity of conduction electrodes connects with the higher resistivity of spacer electrodes and the phase change material is filled between the spacer ele...

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Main Authors CHEN, YI CHAN, CHAO, DER-SHENG, WANG, WEN-HAN, HSU, HONG-HUI, LEE, CHIEN-MIN, LEE, MIN-HUNG, CHEN, WEI SU, CHUO, YEN
Format Patent
LanguageChinese
English
Published 01.06.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by way of the lower resistivity of conduction electrodes connects with the higher resistivity of spacer electrodes and the phase change material is filled between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced so that the phase change memory has the lower operation current and power consumption.
Bibliography:Application Number: TW200594142136