Tunable antifuse element and method of manufacture

A tunable antifuse element (102, 202, 204, 504, 952) and method of fabricating the tunable antifuse element, including a substrate material (101) having an active area (106) formed in a surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a dielectric...

Full description

Saved in:
Bibliographic Details
Main Authors DE SOUZA, RICHARD J, PARRIS, PATRICE M, MORRISON, JENNIFER H, ZITOUNI, MOANISS, CHEN, WEI-ZE, MCKENNA, JOHN M
Format Patent
LanguageChinese
English
Published 01.05.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A tunable antifuse element (102, 202, 204, 504, 952) and method of fabricating the tunable antifuse element, including a substrate material (101) having an active area (106) formed in a surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a dielectric layer (110) disposed between the gate electrode (104) and the active area (106). The dielectric layer (110) including the fabrication of one of a tunable stepped structure (127). During operation, a voltage applied between the gate electrode (104) and the active area (106) creates a current path through the dielectric layer (110) and a rupture of the dielectric layer (110) in a plurality of rupture regions (130). The dielectric layer (110) is tunable by varying the stepped layer thicknesses and the geometry of the layer.
Bibliography:Application Number: TW200695121896