Method of fabricating a non-volatile memory

• Main Authors: TSENG, JIUN-YUAN, LIOU, JR-YI, CHUANG, CHUNIEH
• Format: Patent
• Language: Chinese; English
• Published: 16.12.2006
• Subjects: ELECTRICITY

A method of fabricating a non-volatile memory is provided. A substrate is first provided, a bottom electrode is then formed on the substrate. Thereafter, a solution containing precursors of Zr and Sr is coated on the bottom electrode, and a drying process is performed to form a resistor layer. Then...