Method of fabricating a non-volatile memory

A method of fabricating a non-volatile memory is provided. A substrate is first provided, a bottom electrode is then formed on the substrate. Thereafter, a solution containing precursors of Zr and Sr is coated on the bottom electrode, and a drying process is performed to form a resistor layer. Then...

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Bibliographic Details
Main Authors TSENG, JIUN-YUAN, LIOU, JR-YI, CHUANG, CHUNIEH
Format Patent
LanguageChinese
English
Published 16.12.2006
Subjects
ELECTRICITY
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Summary:A method of fabricating a non-volatile memory is provided. A substrate is first provided, a bottom electrode is then formed on the substrate. Thereafter, a solution containing precursors of Zr and Sr is coated on the bottom electrode, and a drying process is performed to form a resistor layer. Then a top electrode is formed on the resistor layer.
Bibliography:Application Number: TW200594119818