Method of fabricating a non-volatile memory
A method of fabricating a non-volatile memory is provided. A substrate is first provided, a bottom electrode is then formed on the substrate. Thereafter, a solution containing precursors of Zr and Sr is coated on the bottom electrode, and a drying process is performed to form a resistor layer. Then...
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| Main Authors | , , |
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| Format | Patent |
| Language | Chinese English |
| Published |
16.12.2006
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A method of fabricating a non-volatile memory is provided. A substrate is first provided, a bottom electrode is then formed on the substrate. Thereafter, a solution containing precursors of Zr and Sr is coated on the bottom electrode, and a drying process is performed to form a resistor layer. Then a top electrode is formed on the resistor layer. |
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| AbstractList | A method of fabricating a non-volatile memory is provided. A substrate is first provided, a bottom electrode is then formed on the substrate. Thereafter, a solution containing precursors of Zr and Sr is coated on the bottom electrode, and a drying process is performed to form a resistor layer. Then a top electrode is formed on the resistor layer. |
| Author | LIOU, JR-YI TSENG, JIUN-YUAN CHUANG, CHUNIEH |
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| Notes | Application Number: TW200594119818 |
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| Snippet | A method of fabricating a non-volatile memory is provided. A substrate is first provided, a bottom electrode is then formed on the substrate. Thereafter, a... |
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| Title | Method of fabricating a non-volatile memory |
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