Nitridated gate dielectric laye

A metal-oxide-semiconductor field-effect transistors (MOSFET) with a gate structure having a deuterated layer is provided. In accordance with embodiments of the present invention, a transistor comprises the deuterated layer formed over a gate dielectric layer. A gate electrode is formed over the deu...

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Bibliographic Details
Main Authors JIN, YING, LEE, DA-YUAN, CHEN, CHIUN, YEH, MATT, CHEN, SHIHANG
Format Patent
LanguageChinese
English
Published 16.12.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A metal-oxide-semiconductor field-effect transistors (MOSFET) with a gate structure having a deuterated layer is provided. In accordance with embodiments of the present invention, a transistor comprises the deuterated layer formed over a gate dielectric layer. A gate electrode is formed over the deuterated layer. The deuterated layer prevents or reduces dopant penetration into a substrate from the gate electrode. The deuterated layer may be, for example, formed by a thermal process in an ambient of a deuterated gas, such as deuterated ammonia. The deuterated layer may also be formed by a nitridation process using deuterated ammonia.
Bibliography:Application Number: TW200594145623