Silicon wafer and process for the heat treatment of a silicon wafer

• Main Authors: MUELLER, TIMO, JOHANNES STUDENER, FRIEDRICH PASSEK, DAUB, ERICH, MESSMANN, KLAUS, REINHOLD WAHLICH, AMMON, WILFRIED VON, KROTTENTHALER, PETER, AMOLD KUEHHOM
• Format: Patent
• Language: Chinese; English
• Published: 16.12.2006
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a silicon wafer which does not have any epitaxially deposited layer or any layer produced by joining to the silicon wafer, with a nitrogen concentration of from 1x1013 atoms/cm3 to 8x1014 atoms/cm3, an oxygen concentration of from 5.2x1017 atoms/cm3 to 7.5x1017 atoms/cm3, a BMD density in the center of the thickness of the silicon wafer of from 3x108 cm-3 to 2x1010 cm-3, a cumulative total length of all the linear slippages of no more than 3 cm and a cumulative total area of all the areal slippage regions of no more than 7 cm2, the front surface of the silicon wafer having fewer than 45 nitrogen-induced defects of a size of more than 0.13 m LSE in the DNN channel, a layer with a thickness of at least 5 m, in which no more than 1x104 COPs/cm3 with a size of at least 0.09 m occur, and a BMD-free layer with a thickness of at least 5 m. The invention also relates to a process for producing a silicon wafer of this type, which comprises a heat treatment of the silicon wafer, during which th