Semiconductor device and method for forming dummy vias
A semiconductor device. A dielectric layer is formed in a substrate. A dual damascene structure is filled with a conductive layer and inlaid in the dielectric layer. A dummy via structure is filled with a non-conductive material and inlaid in the dielectric layer. The dummy via structure has at leas...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.10.2006
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device. A dielectric layer is formed in a substrate. A dual damascene structure is filled with a conductive layer and inlaid in the dielectric layer. A dummy via structure is filled with a non-conductive material and inlaid in the dielectric layer. The dummy via structure has at least two dummy vias filled with the non-conductive material and located adjacent to two sides of the dual damascene structure respectively. |
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Bibliography: | Application Number: TW200594143150 |