Method and system for fabricating free-standing nanostructures

Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release free-standing nanostructures on the semiconductor wafer. The etching chemistry includes a supercritical or liquid c...

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Main Authors HOYER, RONALD, DUPONT, AUDREY
Format Patent
LanguageChinese
English
Published 16.09.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release free-standing nanostructures on the semiconductor wafer. The etching chemistry includes a supercritical or liquid carbon dioxide fluid and an etching solution. The semiconductor wafer is rinsed by flooding a supercritical or liquid carbon dioxide fluid into the process chamber. The semiconductor wafer is dried by venting out supercritical or liquid carbon dioxide fluid from the process chamber.
AbstractList Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release free-standing nanostructures on the semiconductor wafer. The etching chemistry includes a supercritical or liquid carbon dioxide fluid and an etching solution. The semiconductor wafer is rinsed by flooding a supercritical or liquid carbon dioxide fluid into the process chamber. The semiconductor wafer is dried by venting out supercritical or liquid carbon dioxide fluid from the process chamber.
Author HOYER, RONALD
DUPONT, AUDREY
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Method and system for fabricating free-standing nanostructures
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