Method and system for fabricating free-standing nanostructures

Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release free-standing nanostructures on the semiconductor wafer. The etching chemistry includes a supercritical or liquid c...

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Bibliographic Details
Main Authors HOYER, RONALD, DUPONT, AUDREY
Format Patent
LanguageChinese
English
Published 16.09.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release free-standing nanostructures on the semiconductor wafer. The etching chemistry includes a supercritical or liquid carbon dioxide fluid and an etching solution. The semiconductor wafer is rinsed by flooding a supercritical or liquid carbon dioxide fluid into the process chamber. The semiconductor wafer is dried by venting out supercritical or liquid carbon dioxide fluid from the process chamber.
Bibliography:Application Number: TW200695101977