Ferroelectric memory, multivalent data recording method and multivalent data reading method

A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in ths v...

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Main Authors TAMURA, TETSURO, HOKO, HIROMASA, ARIMOTO, YOSHIHIRO, TABUCHI, YOSHIAKI, YAMAGUCHI, MASAOMI, ISHIHARA, HIROSHI, HASEGAWA, SATOSHI, AIZAWA, KOJI, NARA, YASUO, TAKAHASHI, KAZUHIRO
Format Patent
LanguageChinese
English
Published 01.07.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in ths vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.
Bibliography:Application Number: TW200594130832