Plasma processing apparatus

• Main Authors: TAKEUCHI, TOSHIMASA, SAITO, NAOMICHI, NISHIKAWA, OSAMU, NAKAJIMA, SETSUO
• Format: Patent
• Language: Chinese; English
• Published: 01.06.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

Disclosed is a plasma processing apparatus wherein insulation between an electrode and a casing is improved and the temperature of the electrode can be controlled from the outside. A solid dielectric body (50) is formed on a discharge space-forming surface of an electrode (30). The electrode (30) is placed in a casing (20) in such a manner that the solid dielectric body (50) on the discharge space-forming surface is exposed. The space (29) within the casing, namely the space between the casing (20) and the electrode (30) inside the casing, is filled with a substantially pure nitrogen gas, and the pressure of this nitrogen gas is set higher than that of the discharge space. Preferably, the nitrogen gas is circulated.