Plasma processing apparatus

Disclosed is a plasma processing apparatus wherein insulation between an electrode and a casing is improved and the temperature of the electrode can be controlled from the outside. A solid dielectric body (50) is formed on a discharge space-forming surface of an electrode (30). The electrode (30) is...

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Bibliographic Details
Main Authors TAKEUCHI, TOSHIMASA, SAITO, NAOMICHI, NISHIKAWA, OSAMU, NAKAJIMA, SETSUO
Format Patent
LanguageChinese
English
Published 01.06.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PLASMA TECHNIQUE
PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS
PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a plasma processing apparatus wherein insulation between an electrode and a casing is improved and the temperature of the electrode can be controlled from the outside. A solid dielectric body (50) is formed on a discharge space-forming surface of an electrode (30). The electrode (30) is placed in a casing (20) in such a manner that the solid dielectric body (50) on the discharge space-forming surface is exposed. The space (29) within the casing, namely the space between the casing (20) and the electrode (30) inside the casing, is filled with a substantially pure nitrogen gas, and the pressure of this nitrogen gas is set higher than that of the discharge space. Preferably, the nitrogen gas is circulated.
Bibliography:Application Number: TW200594132666