Manufacturing method of ion implantation device and semiconductor device

The present invention provides an ion implantation device in which deterioration of characteristics of an element can be prevented. The ion implantation device is provided with a sample board 22 at which a sample 21 having a main face is installed; an ion generating means 11 for generating a plurali...

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Bibliographic Details
Main Authors ITOKAWA, HIROSHI, SUGURO, KYOICHI, KAWASE, YOSHIMASA
Format Patent
LanguageChinese
English
Published 01.03.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides an ion implantation device in which deterioration of characteristics of an element can be prevented. The ion implantation device is provided with a sample board 22 at which a sample 21 having a main face is installed; an ion generating means 11 for generating a plurality of ions, which contains a container in which ion source gas is supplied, and a filament installed in the container and emitting thermions; injection means 13 to 19 for injecting an ion beam containing the plurality of ions into the main face of the sample 21; and controlling means 23 to 25 to control the position of the sample 21 so that the eccentric direction of the center of gravity of the ion beam coincides with a direction of normal line of the main face.
Bibliography:Application Number: TW200594121539