Light-emitting layer structure of GaN light emitted diode

• Main Authors: YOU, JENG-JANG, JIAN, FENG-REN, TU, RUIN, WEN, TZ-JI, WU, LIANG-WEN
• Format: Patent
• Language: Chinese; English
• Published: 16.02.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

This invention provides a method to grow epitaxial film with better epitaxial character for light-emitting layer of GaN light emitted diode, and also improve the luminescent efficiency at the same time. Between the GaN N-contact layer and the GaN P-contact layer, a lower barrier layer, at least one intermediate layer and an upper barrier layer separately above the GaN N-contact layer are formed sequentially upwards from the N-contact layer. That is to say, the structure has at least one intermediate layer sandwiched between the upper barrier layer and lower barrier layer. When the number of intermediate layer is greater than one and thus there are many intermediate layers sandwiched between the upper barrier layer and the lower barrier layer, there has an intermediate barrier layer sandwiched between the adjacent intermediate layers.