High voltage lateral fet structure with improved on resistance performance

In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The body of semiconductor material includes alternating layers of opposite conductivity type that extend between a trench drain region and a trench gate structure. The trench gate structure controls at least one sub...

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Bibliographic Details
Main Authors NAIR, RAJESH S, HOSSAIN, ZIA, QUDDUS, MOHAMMED TANVIR, TU, SHANGHUI LARRY
Format Patent
LanguageChinese
English
Published 01.11.2005
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The body of semiconductor material includes alternating layers of opposite conductivity type that extend between a trench drain region and a trench gate structure. The trench gate structure controls at least one sub-surface channel region. The body of semiconductor material provides sub-surface drift regions to reduce on resistance without increasing device area.
Bibliography:Application Number: TW20050106269