Semiconductor device, electro-optic device, integrated circuit, and electronic apparatus

• Main Author: HIROSHIMA, YASUSHI
• Format: Patent
• Language: Chinese; English
• Published: 16.10.2005
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

Considering conditions of a process of forming microscopic openings, a method of forming the microscopic openings to manufacture a semiconductor device capable of stably obtaining a thin film transistor of superior performance even on the large sized glass substrate are provided. The steps of forming a priming insulation film (121) on a substrate (11), forming a first insulation film (122) on the priming insulation film (121), forming an opening (123) with a diameter of d1 in the first insulation film (122), and forming a second insulation film (124) on the first insulation film (122) including the opening (123) are included, wherein, if the film thickness distribution of the second insulation film (124) inside the substrate in the step of forming the second insulation film is ±y %, the diameter d1 of the opening satisfies the following relationship. D1≤6500/y+85nm