Method of manufacturing metal-oxide- semiconductor transistor
A method of manufacturing a metal-oxide-semiconductor transistor is provided. A substrate having a gate structure thereon is provided. A source/drain extension region is formed in the substrate on each side of the gate structure. Thereafter, a carbon-containing material layer is formed over the subs...
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| Main Authors | , , |
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| Format | Patent |
| Language | Chinese English |
| Published |
16.09.2005
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| Online Access | Get full text |
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| Summary: | A method of manufacturing a metal-oxide-semiconductor transistor is provided. A substrate having a gate structure thereon is provided. A source/drain extension region is formed in the substrate on each side of the gate structure. Thereafter, a carbon-containing material layer is formed over the substrate and then the carbon-containing material layer is etched back to form spacers on the sidewalls of the gate structure. Finally, a source/drain region is formed in the substrate on each side of the spacer-coated gate structure. |
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| Bibliography: | Application Number: TW20040105483 |