Techniques for patterning features in semiconductor devices

Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithograph...

Full description

Saved in:
Bibliographic Details
Main Authors ALLEN, SCOTT D, HOLMES, STEVEN J, WISE, RICHARD STEPHAN, BABICH, KATHERINA E, PFEIFFER, DIRK, MAHOROWALA, ARPAN P
Format Patent
LanguageChinese
English
Published 16.07.2005
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
SEMICONDUCTOR DEVICES
TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Online AccessGet full text

Cover

More Information
Summary:Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.
Bibliography:Application Number: TW20040126407