LDMOS device with isolation guard rings

A method of forming a lateral double-diffused metal oxide semiconductor (LDMOS) device and structure for same. A preferred embodiment comprises forming a first guard ring around and proximate the drain of a LDMOS device, and forming a second guard ring around the first guard ring. The first guard ri...

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Bibliographic Details
Main Authors LIOU, RUEY-HSIN, CHEN, FU-HSIN
Format Patent
LanguageChinese
English
Published 16.04.2005
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a lateral double-diffused metal oxide semiconductor (LDMOS) device and structure for same. A preferred embodiment comprises forming a first guard ring around and proximate the drain of a LDMOS device, and forming a second guard ring around the first guard ring. The first guard ring comprises a P+ base guard ring, and the second guard ring comprises an N+ collector guard ring formed in a deep N-well, in one embodiment. The first guard ring and second guard ring prevent leakage current from the drain of the LDMOS device to the substrate.
Bibliography:Application Number: TW20040118346