A slurry for chemical mechanical polishing process

A slurry for chemical mechanical polishing process which contains 5 to 50 wt.% of abrasive particle, 0.05 to 5 wt.% of compounds or salts of alkaline metal, and o.1 to 5 wt.% of additive. The additive at least comprising an amine derivative, an organic carboxylic acid and a surfactant, provides an e...

Full description

Saved in:
Bibliographic Details
Main Authors TSAI, ER-SHIEN, JENG, YU-LUNG, SHEEN, WEN-SHOEI, CHU, JEA JU, SHEN, KWO-HUNG, TING, JACK
Format Patent
LanguageChinese
English
Published 16.01.2005
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A slurry for chemical mechanical polishing process which contains 5 to 50 wt.% of abrasive particle, 0.05 to 5 wt.% of compounds or salts of alkaline metal, and o.1 to 5 wt.% of additive. The additive at least comprising an amine derivative, an organic carboxylic acid and a surfactant, provides an enhanced cleaning effect after polishing. The stability of slurry is found significantly improved with the additives. The slurry with the additives does not deteriorate the polishing performance.
Bibliography:Application Number: TW20030118037