Method of forming insulating film improved in electric insulating property

• Main Authors: HIROTA, TOSHIYUKI, SETOKUBO, TSUYOSHI, AISO, FUMIKI, FUJIWARA, SYUJI, TAKIMOTO, TOSHIHIDE
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2004
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method of forming an insulating film according to the present invention reacts a nitrogen containing gas with a compound composed of silicon and chlorine under the condition that the gas flow ratio of the compound to the nitrogen containing gas is lower than 1/30 to form a silicon nitride film. In the present invention, by forming the silicon nitride film at the gas flow ratio lower than 1/30, an insulating film having this silicon nitride film is improved in electric insulating property, so that a smaller leak current flows therethrough.