Semiconductor device

Disclosed is a semiconductor device including: a semiconductor substrate; at least one layer of a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less, an entire layer of the first insulating film being separated at least near four c...

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Bibliographic Details
Main Authors HASUNUMA, MASAHIKO, HATASAKI, KOJI
Format Patent
LanguageChinese
English
Published 01.12.2004
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a semiconductor device including: a semiconductor substrate; at least one layer of a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less, an entire layer of the first insulating film being separated at least near four corners of the semiconductor substrate by a lacking portion that extends along the four corners; and a second insulating film covering a side face of the entire layer of the first insulating film in the lacking portion on a center side of the semiconductor substrate and having a relative dielectric constant of over 3.8.
Bibliography:Application Number: TW20040107107