Thin film transistor with a self-aligned lightly doped structure and its manufacturing method

• Main Authors: DENG, DE-HUA, CHANG, SHINANG, FANG, CHUN-HSIANG, TSAI, YAW-MING
• Format: Patent
• Language: Chinese; English
• Published: 01.11.2004
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A kind of thin film transistor with a self-aligned lightly doped structure and its manufacturing method are provided in the present invention. At first, a substrate is provided; and a semiconductor layer is formed on the substrate surface. Then, a gate insulation layer is sequentially formed on the...