Thin film transistor with a self-aligned lightly doped structure and its manufacturing method

• Main Authors: DENG, DE-HUA, CHANG, SHINANG, FANG, CHUN-HSIANG, TSAI, YAW-MING
• Format: Patent
• Language: Chinese; English
• Published: 01.11.2004
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A kind of thin film transistor with a self-aligned lightly doped structure and its manufacturing method are provided in the present invention. At first, a substrate is provided; and a semiconductor layer is formed on the substrate surface. Then, a gate insulation layer is sequentially formed on the semiconductor layer such that the gate insulation layer covers part of the semiconductor layer surface. Then, a conducting layer is formed on the gate insulation layer and is undergone with an etching process to expose part of the gate insulation layer. An ion implantation process is then conducted onto the semiconductor layer to form the first doped region on the semiconductor layer, which is covered by gate insulation layer, and to form the second doped region on the semiconductor layer that is exposed from the surface.