Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device includes the steps of forming a copper layer (5, 12) by plating, forming a defect trapping film (13) on the copper layer (5, 12), moving a defect in the copper layer (5, 12) into the defect trapping film (13) by annealing or the like, and removing the...

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Bibliographic Details
Main Authors MATSUOKA, TAKERU, FUJII, YASUHISA, KAMOSHIMA, TAKAO
Format Patent
LanguageChinese
English
Published 01.11.2004
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device includes the steps of forming a copper layer (5, 12) by plating, forming a defect trapping film (13) on the copper layer (5, 12), moving a defect in the copper layer (5, 12) into the defect trapping film (13) by annealing or the like, and removing the defect trapping film (13). Thereby, a semiconductor device in which concentration of micro-voids in a portion in proximity to a bottom of a via due to stress migration can be restrained and a method of manufacturing the same can be obtained.
Bibliography:Application Number: TW200493105502