Externally-extended separation method of stacking layer

• Main Authors: WILBERTZ, CHRISTOPH, MUELLER, KARLHEINZ, LANGGUTH, GERNOT, WILLE, HOLGER
• Format: Patent
• Language: Chinese; English
• Published: 16.10.2004
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention is related to a kind of externally-extended separation method of stacking layer. In the invented method, a lowly doped epitaxial layer is deposited on the highly doped areas of the silicon substrate. The purpose of the invention is to ensure the functionality of the devices to be manufactured while effectively preventing the occurrence of auto-doping phenomenon. In the invented method, a high-resistance silicon layer is deposited on the highly doped areas before the externally-extended layer is deposited on the highly doped area; and the other areas are shielded, or the high-resistance layer is locally removed from the other areas. After that, an externally-extended layer is separated between the silicon layer deposited on the highly doped area and the silicon substrate outside the highly doped areas. The auto-doping phenomenon can be effectively prevented through the use of the high-resistance silicon layer.