Polishing composition

A polishing composition comprising an aqueous medium and abrasive particles, wherein the abrasive particles comprise abrasive particles having a particle size of 2 to 200 nm in an amount of 50% by volume or more, the abrasive particles having a particle size of 2 to 200 nm comprising (i) 40 to 75% b...

Full description

Saved in:
Bibliographic Details
Main Authors HAGIHARA, TOSHIYA, TAKASHINA, SHIGEAKI, YONEDA, YASUHIRO
Format Patent
LanguageChinese
English
Published 16.10.2004
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
Online AccessGet full text

Cover

More Information
Summary:A polishing composition comprising an aqueous medium and abrasive particles, wherein the abrasive particles comprise abrasive particles having a particle size of 2 to 200 nm in an amount of 50% by volume or more, the abrasive particles having a particle size of 2 to 200 nm comprising (i) 40 to 75% by volume of small size particles having a particle size of 2 nm or more and less than 58 nm; (ii) 0 to 50% by volume of intermediate size particles having a particle size of 58 nm or more and less than 75 nm; and (iii) 10 to 60% by volume of large size particles having a particle size of 75 nm or more and 200 nm or less; a polishing composition comprising an aqueous medium and abrasive particles, wherein the abrasive particles comprise abrasive particles (A) having an average particle size of 2 to 50 nm; and abrasive particles (B) having an average particle size of 52 to 200 nm, wherein a weight ratio of A to B (A/B) is from 0.5/1 to 4.5/1; a polishing process comprising subjecting a semiconductor substrate to plan
Bibliography:Application Number: TW200392121153