Semiconductor device and manufacturing method thereof

• Main Authors: MATSUOKA, TAKERU, MASAMITSU, TAKESHI, KAMOSHIMA, TAKAO
• Format: Patent
• Language: Chinese; English
• Published: 01.08.2004
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a semiconductor device and the manufacturing method thereof. The semiconductor device can minimize the thermal expansion of the metal wiring 3 when an interlayer insulating film 5 is formed by a plasma CVD method so as to cover the metal wiring 3, thus preventing the production of voids in the metal wiring 3. The semiconductor device has a substrate 1, a metal wiring 3 formed on the substrate 1 and covered with the films of a high-melting-point metal 2 and 4 immediately above and below and the interlayer insulating film 5 formed by a plasma CVD method so as to cover the metal wiring 3. Next, the thermal expansion of the metal wiring 3 can be minimize by the bonding force between the metal wiring 3 and the films of high-melting-point metal 2 and 4 when the interlayer insulating film 5 is formed.