Method of forming spherical shape quantum dot device using gas phase condensation and epitaxy technique

• Main Authors: LIN, ZE-QI, LI, SZ-TSEN
• Format: Patent
• Language: Chinese; English
• Published: 16.07.2004
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

This invention relates to a method of forming a spherical shape quantum dot device using gas phase condensation and epitaxy technique, which comprises the following steps: (a) a quantum dot growth step using a gas phase condensation method to grow quantum dots on a substrate; (b) a quantum dot treatment step using an organic solvent and a ultrasonic wave cleaner to ultrasonically treat the substrate with quantum dot samples formed in step (a); and (c) an epitaxial layer covering step using the epitaxy technique to cover an epitaxial layer on the quantum dot samples treated by step (b). According to the abovementioned steps, the quantum dot device with complete spherical shape can be produced and, therefore, the shortcoming of conventional epitaxial growth quantum dot method, which is not easy to achieve complete spherical shape, can be overcome.