Method and system for joule heating characterization

According to one exemplary embodiment, a method for establishing a relationship between Joule heating in a conductor and a current density in the conductor is implemented by performing wafer level measurements (500). According to this exemplary embodiment, wafer level measurements are performed to a...

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Bibliographic Details
Main Authors PHAM, VAN-HUNG, YAO, HUADE WALTER, MARATHE, AMIT P
Format Patent
LanguageChinese
English
Published 16.06.2004
Subjects
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:According to one exemplary embodiment, a method for establishing a relationship between Joule heating in a conductor and a current density in the conductor is implemented by performing wafer level measurements (500). According to this exemplary embodiment, wafer level measurements are performed to arrive at a temperature coefficient of resistance in the conductor (118, 502). The method also includes determining a thermal resistance of the conductor (510). The thermal resistance is then utilized to establish a relationship between Joule heating in the conductor and the current density in the conductor (512). The relationship so obtained is then utilized to determine design rules, mean time to fail, and other information to aid in the design of reliable semiconductor devices (514). According to another exemplary embodiment, a wafer level measurement system (100) is utilized to establish a relationship between Joule heating in a conductor and a current density in the conductor.
Bibliography:Application Number: TW20030126055