Copper silicide passivation for improved reliability

A silane passivation process, carried out in-situ together with the formation of a subsequent dielectric film, converts the exposed Cu surfaces of a Cu interconnect structure, to copper silicide. The copper silicide suppresses Cu diffusion and electromigration and serves as a barrier material in reg...

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Bibliographic Details
Main Authors STEINER, KURT GEORGE, GILKES, DANIELE, MERCHANT, SAILESH MANSINH, BRADSHAW, ROBERT WAYNE, RAMAPPA, DEEPAK A
Format Patent
LanguageChinese
English
Published 16.05.2004
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A silane passivation process, carried out in-situ together with the formation of a subsequent dielectric film, converts the exposed Cu surfaces of a Cu interconnect structure, to copper silicide. The copper silicide suppresses Cu diffusion and electromigration and serves as a barrier material in regions where contact to further conductive material is made. An entire copper surface of a copper interconnect structure may be silicided or a local portion of the surface silicided after an opening is formed in an overlying dielectric to expose a portion of the copper surface.
Bibliography:Application Number: TW200392109732