Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bonding

• Main Authors: ZHOU, MEI-SHENG, SUDIJONO, JOHN LEONARD, HO KWOK KEUNG, PAUL PAUL, YI XU, ALIYU, YAKUB, CHOOI, SIMON, SUBIPTO SUDIPTO RANENGRA ROY, GUPTA, SUBHASH
• Format: Patent
• Language: Chinese; English
• Published: 16.10.2003
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

A method of bonding a wire to a metal bonding pad, comprising the following step. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The boding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.