SEMICONDUCTOR STORAGE DEVICE

The semiconductor memory contains a degenerate semiconductor layer (1) and a nondegenerate semiconductor layer (2) having traps in the energy gap. The conductivity type of the degenerate semiconductor layer (1) is opposite to that of the nondegenerate semiconductor layer (2). Situated between the de...

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Bibliographic Details
Main Authors MADYAROV MARAT R,SU, TERESHIN SERGEJ A,SU, POKALYAKIN VADIM I,SU, MALAKHOV BORIS A,SU, ELINSON MORDUKH I,SU
Format Patent
LanguageEnglish
Published 15.03.1983
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:The semiconductor memory contains a degenerate semiconductor layer (1) and a nondegenerate semiconductor layer (2) having traps in the energy gap. The conductivity type of the degenerate semiconductor layer (1) is opposite to that of the nondegenerate semiconductor layer (2). Situated between the degenerate semiconductor layer (1) and the nondegenerate semiconductor layer (2) is a dielectric layer (4) capable of tunnel conduction. Deposited on the nondegenerate semiconductor layer (2) is a layer of material (5) which forms a potential barrier with the nondegenerate semiconductor layer (2) and, together with the dielectric layer (4) which is capable of tunnel conduction, prevents the penetration of the charge carriers from the degenerate semiconductor layer (1) and from the ohmic contact (6) into the nondegenerate semiconductor layer (2).
Bibliography:Application Number: SU19802917351